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Electronic structure of metal–sapphire interfaces
Author(s) -
Gillet E.,
Ealet B.,
Berlioz J. L.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740160195
Subject(s) - x ray photoelectron spectroscopy , dangling bond , sapphire , auger electron spectroscopy , metal , ultraviolet photoelectron spectroscopy , electron energy loss spectroscopy , electron spectroscopy , materials science , electronic structure , monolayer , spectroscopy , chemistry , analytical chemistry (journal) , nanotechnology , silicon , chemical engineering , transmission electron microscopy , metallurgy , computational chemistry , laser , physics , optics , chromatography , quantum mechanics , nuclear physics , engineering
We have investigated metal‐Al 2 O 3 bonding by AES (Auger electron spectroscopy), EELS (energy electron loss spectroscopy) and XPS (x‐ray photoelectron spectroscopy). The metal–alumina interfaces were formed by in situ vapour deposition and we studied the early stages of metal condensation for Pd, Ni, Cr and Zn at room temperature on well‐defined (0001) and ( 1 012) sapphire surfaces. Depending on the treatment, these surfaces exhibit different electronic structures. Upon increasing the metal coverage, new electronic features appear, which point out the role of surface defects (oxygen vacancies, dangling bonds, etc.) during the formation of the first metal monolayer.