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Study of the large non‐stoichiometry of copper(I) oxide on oxidized copper ( T < 573 K, p O 2 = 0.21 atm)
Author(s) -
Lenglet M.,
Machefert J. M.,
Claude J. M.,
Lefez B.,
Lopitaux J.,
D'Huysser A.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740160160
Subject(s) - stoichiometry , copper , oxide , copper oxide , phase (matter) , metal , chemistry , inorganic chemistry , absorption (acoustics) , hydrogen , crystallography , absorption spectroscopy , atom (system on chip) , analytical chemistry (journal) , materials science , physics , organic chemistry , chromatography , composite material , quantum mechanics , computer science , embedded system
The study of the oxidation of copper at low temperatures shows that the metal is not recovered by a pure stoichiometric Cu 2 O but by a copper(I) oxide phase with the same crystalline structure as Cu 2 O, and that this phase exhibits a very large non‐stoichiometry (composition between Cu 60 O 40 and Cu 63 O 37 ). These results explain that the UV‐Vis‐NIR spectra are different from those of high‐purity Cu 2 O crystals and the position of the absorption bands attributable to defects could be justified easily by the Bohr theory of the hydrogen atom applied to semiconductors.