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Back‐scattering and X‐ray‐induced correction factors for AES of thin overlayers: Influence on lateral resolution
Author(s) -
Valamontes E.,
Nassiopoulos A. G.,
Glezos N.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740160140
Subject(s) - scattering , range (aeronautics) , electron , auger effect , beam (structure) , resolution (logic) , electron scattering , atomic physics , monte carlo method , cathode ray , beam energy , auger , auger electron spectroscopy , x ray , materials science , optics , physics , nuclear physics , statistics , mathematics , artificial intelligence , computer science , composite material
Some results on Monte‐Carlo calculations of back‐scattering and x‐ray‐induced correction factors for AES on thin overlayers have been given in a previous paper. In this work, further results are given concerning both correction factors and the lateral resolution in the primary beam energy range 5–60 keV. The x‐ray‐induced correction factors include both characteristic and continuous x‐rays created in the bulk by the primary electron beam or by back‐scattered electrons that contribute to the creation of Auger electrons within the film on their way out of the sample. The contribution of continuous x‐rays, negligible at low primary beam energies, is found to be important at energies of >20 keV. The influence of back‐scattering on the lateral resolution in the primary beam energy range 20–60 keV has also been studied.