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A new SIMS instrument for submicron microarea analysis
Author(s) -
Nomura S.,
Shichi H.,
Mitani E.,
Izumi E.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740160122
Subject(s) - scanning electron microscope , sample (material) , ion beam analysis , cathode ray , focused ion beam , secondary ion mass spectrometry , materials science , analytical chemistry (journal) , elemental analysis , ion beam , ion , beam (structure) , electron beam induced deposition , electron , chemistry , optics , physics , scanning transmission electron microscopy , organic chemistry , chromatography , quantum mechanics , composite material
Abstract A new type of SIMS instrument has been developed for submicron microarea analysis. The instrument is incorporated with an electron beam, which provides scanning electron microscopy (SEM) images of a sample. The operator determines the area to be analysed by observing the SEM image without damaging the sample, then switches the electron beam to an ion beam and carries out a SIMS analysis of that area. Electron and ion Beams with diameters of <20 nm and <70 nm, respectively, are focused on the sample. Some application data of the micro‐area elemental analysis are presented.