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Determination of sputter damage on InP by MAI ellipsometry
Author(s) -
Dinges H. W.,
Kempf B.,
Burkhard H.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740160118
Subject(s) - ellipsometry , wafer , materials science , sputtering , refractive index , etching (microfabrication) , angle of incidence (optics) , sputter deposition , penetration (warfare) , optics , wavelength , layer (electronics) , optoelectronics , analytical chemistry (journal) , isotropic etching , thin film , chemistry , composite material , nanotechnology , physics , engineering , operations research , chromatography
InP wafers were ion‐beam‐etched using different energies. The damaged surfaces were investigated by ellipsometry at different angles of incidence as a function of wavelength. Penetration depths and changes in refractive indices n D – iK D are shown. Si 3 N 4− coated sputter‐etched InP wafers are also measured with multiple angle of incidence (MAI) ellipsometry. Coatings are removed step by step by wet chemical etching, and MAI ellipsometry is carried out after each step. The results are fitted to the model InP/sputter‐damaged layer/Si 3 N 4 . The parameters for the damaged layers are given.