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An ELS and AES study of InP(100) surfaces during Sb atom condensation
Author(s) -
Gruzza B.,
Pariset C.,
Abdellaoui S.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740160114
Subject(s) - auger electron spectroscopy , condensation , atom (system on chip) , chemistry , indium , analytical chemistry (journal) , deposition (geology) , electron spectroscopy , spectroscopy , physics , paleontology , organic chemistry , chromatography , quantum mechanics , sediment , biology , computer science , nuclear physics , thermodynamics , embedded system
Auger electron spectroscopy (AES) and electron loss spectroscopy (ELS) have been performed in order to investigate InP (100) surfaces subjected to a controlled Sb deposition. The combination of these two electron spectroscopies and a fine analysis of AES signals as a function of surface coverage allows us to propose a model for the formation of Sb/InP interfaces. Indium droplets present on the sample after Ar + cleaning disappear during the first Sb deposit to form an InSb surface compound, which gives the surface great stability. If the deposit is formed at a high temperature after this first stage, no more Sb atoms can be condensed, whereas at room temperature the growth mode is of the Franck Van Der Merwe type.