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Temperature dependence of the phosphorus segregation at the twin boundary in an Fe–4 at.% Si alloy
Author(s) -
Lejček P.,
Hofmann S.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.7401601113
Subject(s) - crystallite , grain boundary , alloy , phosphorus , materials science , analytical chemistry (journal) , crystal twinning , crystallography , chemistry , thermodynamics , metallurgy , microstructure , physics , chromatography
AES of in situ fractured bicrystals of an Fe–4 at.% Si alloy containing traces of phosphorus was used to study the temperature dependence of the segregation at the symmetrical {112} (coherent twin) grain boundary between 773 and 1173 K. The observed enrichment of P decreases with temperature, whereas that of Si increases slightly. This behaviour is described by a mutual repulsive interaction coefficient α′ = 92 kJ mol −1 of P and Si and the corre‐sponding pure binary segregation enthalpies Δ H 0 P = −7.9 kJ mol −1 and Δ H 0 Si = −3.0 kJ mol −1 , the absolute values of which are considerably lower than those reported for polycrystalline samples of FeP and FeSi. The differences are explained on the basis of orientation, concentration and interaction effects.