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An XPS study of the kinetics of dissolution of ZrO 2 in α‐Zr
Author(s) -
Prieto P.,
Galán L.,
Sanz J. M.,
Rueda F.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.7401601111
Subject(s) - dissolution , x ray photoelectron spectroscopy , activation energy , oxide , annealing (glass) , crystallite , oxidizing agent , kinetics , diffusion , oxygen , analytical chemistry (journal) , materials science , atmospheric temperature range , decomposition , chemistry , metallurgy , chemical engineering , thermodynamics , physics , organic chemistry , chromatography , quantum mechanics , engineering
The dissolution of a 15 Å thick oxide layer into polycrystalline Zr at temperatures between 440 and 600 K and under non‐oxidizing conditions has been studied by XPS. The thickness of the oxide layer as a function of the annealing time shows a parabolic dependence. It is then concluded that the rate of dissolution is controlled by diffusion into the Zr substrate of oxygen atoms, which generate at the interface by decomposition of the oxide. In addition, the effective oxygen diffusion coefficient in the 440–600 K temperature range has been determined as D = 4.42 × 10 −6 exp(−99.7/RT) cm 2 s −1 , with the activation energy in kJ mol −1 .