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RBS and ERD analysis of semiconductor device materials
Author(s) -
Kuiper A. E. T.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740160110
Subject(s) - elastic recoil detection , thin film , rutherford backscattering spectrometry , semiconductor , materials science , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , chromatography
Abstract The number of applications of Rutherford back‐scattering spectrometry (RBS) in the field of integrated circuit (IC)‐related materials research is ever‐increasing. Both qualitative and quantitative information about thin‐film material can be derived from a single RBS spectrum, as is demonstrated from various example that are typical for semiconductor research. Such examples include kinetic studies of thin‐film reactions. The RBS facility constructed at Philips Research Laboratories in Eindhoven for in situ investigations is described. Hydrogen, which in principle cannot be detected in RBS, can be measured with the related technique of elastic recoil detection (ERD). ERD can be performed readily in conventional RBS equipment, which adds to its attractiveness as a complementary technique. Examples are discussed to show how RBS and ERD combine in characterizing thin films.