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Study of surface passivation of InP
Author(s) -
Faur Mircea,
Faur Maria,
Jenkins Phillip,
Goradia Manju,
Bailey Sheila,
Jayne Douglas,
Weinberg Irving,
Goradia Chandra
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740151207
Subject(s) - passivation , x ray photoelectron spectroscopy , photoluminescence , doping , analytical chemistry (journal) , materials science , chemistry , chemical engineering , layer (electronics) , nanotechnology , optoelectronics , engineering , chromatography
Abstract The effects of various surface preparation procedures, including chemical treatments in HF, HNO 3 , o ‐H 3 PO 4 and H 2 SO 4 solutions and anodic oxidation, on the passivating properties of InP have been investigated in order to optimize the fabrication procedures of n + p or p + n InP solar cells made by thermal diffusion. The InP substrates used in this study were p ‐type Cd‐doped to a level of 1.7 × 10 16 cm −3 , Zn‐doped to levels of 2.2 × 10 16 and 1.2 × 10 18 cm −3 and n ‐type S‐doped to 4.4 × 10 18 cm −3 . The passivating properties have been evaluated from photoluminescence (PL) data; good agreement was found between the level of surface passivation and the composition of different surface layers as revealed by x‐ray photoelectron spectroscopy (XPS) analysis.