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Applications of secondary neutral mass spectrometry (SNMS) in VLSI technology
Author(s) -
Anderle Mariano,
Moro Lorenza
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740150905
Subject(s) - silicide , materials science , thin film , passivation , annealing (glass) , analytical chemistry (journal) , secondary ion mass spectrometry , sputtering , doping , optoelectronics , mass spectrometry , silicon , chemistry , nanotechnology , metallurgy , layer (electronics) , chromatography
Secondary neutral mass spectrometry (SNMS) is a promising analytical technique for the characterization of thin films and bulk samples. We applied this technique to thin films used in VLSI technology. The samples investigated ranged from sputter‐deposited Al alloy films used as long‐range interconnections, to silicide or silicide/polysilicon structures for gate interconnections, to dielectric films and doped silicon dioxide glasses used for insulation and passivation purposes. In all these samples the distribution of the elements was studied as a function of deposition and/or annealing conditions. The SNMS results are compared with those obtained by more common analytical techniques, such as SIMS and nuclear analyses (RBS and nuclear reaction analysis). This comparison emphasizes the features of SNMS: good depth information, less sensitivity to matrix effects and optimum depth resolution.