Premium
Optimization of the dynamic range of SIMS depth profiles by sample preparation
Author(s) -
von Criegern R.,
Weitzel L.,
Zeininger H.,
LangeGieseler R.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740150704
Subject(s) - dynamic range , silicon , materials science , sputtering , range (aeronautics) , analytical chemistry (journal) , impact crater , figure of merit , boron , sample (material) , secondary ion mass spectrometry , ion , chemistry , optics , optoelectronics , nanotechnology , composite material , thin film , physics , environmental chemistry , chromatography , organic chemistry , astronomy
The dynamic range is one of the most important figures of merit of SIMS measurements and equipment. The term refers to the concentration range of an analysed element—its concentration being high near the surface but decreasing with increasing depth—that can be measured by depth profiling. The state of the art is such that, under favourable conditions, 5–6 orders of magnitude are possible (measured on ion‐implanted boron in silicon). It is shown that with special sample preparation techniques (removal of the sputter crater environment) the dynamic range can be extended to 7 orders of magnitude. Experimental details of the preparative methods are given together with a critical evaluation of the methods.