Premium
XPS study of the Y/SiO x interface at room temperature
Author(s) -
Reichl R.,
Gaukler K. H.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740150304
Subject(s) - x ray photoelectron spectroscopy , yttrium , oxide , silicon , deposition (geology) , chemical vapor deposition , analytical chemistry (journal) , redox , layer (electronics) , materials science , chemistry , inorganic chemistry , chemical engineering , nanotechnology , metallurgy , environmental chemistry , paleontology , sediment , engineering , biology
The reducing reaction of vapour‐deposited yttrium layers on silicon oxide was measured by XPS at room temperature. The redox reaction was confined essentially to the deposition period. The thickness of the insulating SiO x layer decreases by ∼0.2–0.3 nm. No further reaction during the 8 h following deposition could be observed.