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Aluminum surface mobility on two types of silicon oxide during ionized cluster beam deposition
Author(s) -
Levenson L. L.,
Swartzlander A. B.,
Usui H.,
Yamada I.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740150216
Subject(s) - scanning electron microscope , acceleration voltage , deposition (geology) , silicon , analytical chemistry (journal) , oxide , microprobe , diffusion , silicon oxide , auger electron spectroscopy , materials science , chemistry , cathode ray , optoelectronics , mineralogy , electron , composite material , metallurgy , paleontology , physics , thermodynamics , silicon nitride , chromatography , quantum mechanics , sediment , nuclear physics , biology
An ionized cluster beam (ICB) source was used to deposit A1 onto two types of silicon oxides. One was a thermal oxide generated by steam oxidation of Si at 900°C. The other was a P‐doped oxide deposited on Si at 425°C. During Al deposition, 60 μm diameter wires were held at the substrates to serve as masks. After A1 deposition, the wires were removed and the masked areas were examined by scanning electron microscopy (SEM) and by scanning Auger microprobe (SAM). The ICB source was operated at 0, 3 and 6 kV accleration voltages. The substrates were held at 80, 200 and 400°C during A1 depositions. The A1 deposition rate averaged 24 nm min. −1 The chamber pressure during deposition was 3 × 10 −4 Pa. The diffusion distance of A1l under a mask edge was determined from the SEM micrographs and SAM line scans. The maximum diffusion distance occurred at 200°C for both substrates, with the exception of the 0 kV A1 beam deposited on the low‐temperature oxide (LTO). On the high‐temperature oxide (HTO), the maximum diffusion distance was 29 μm at 6 kV acceleration voltage. The minimum diffusion distance was 8 μm at 70–80°C on the LTO for acceleration voltages of 0 and 3 kV.