Premium
Growth and characterization of GaAs on sapphire (0001) by molecular beam epitaxy
Author(s) -
Diebold Alain C.,
Steinhauser S. W.,
Mariella R. P.,
Marti Jordi,
Reidinger F.,
Antrim R. F.
Publication year - 1990
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740150215
Subject(s) - reflection high energy electron diffraction , molecular beam epitaxy , sapphire , electron diffraction , materials science , kikuchi line , crystallinity , transmission electron microscopy , diffraction , crystal (programming language) , epitaxy , substrate (aquarium) , photoluminescence , crystallography , misorientation , layer (electronics) , optoelectronics , optics , chemistry , grain boundary , nanotechnology , microstructure , composite material , laser , physics , oceanography , geology , computer science , programming language
Abstract Crystal epilayers of (111)‐oriented GaAs have been grown successfully on sapphire (0001) substrates by molecular beam epitaxy. Although the epilayers were found to have a very high twin density, large areas (cm 2 ) with no grain boundaries were observed. Both substrate surface preparation and temperature controlled the crystallinity. Reflection high‐energy electron diffraction (RHEED) was used to characterize the sapphire surface after ozone cleaning. RHEED patterns taken at several azimuths were consistent with an outermost layer of oxygen atoms. Powder x‐ray diffraction and rotation x‐ray photographs were used to determine growth conditions that resulted in an improvement in the crystalline order. Cross‐sectional transmission electron microscopy confirmed the crystalline nature of the GaAs epilayers. The quality of the GaAs was also characterized by photoluminescence. Finally, crystalline quality was assessed using double‐crystal x‐ray diffraction rocking curves.