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Post‐implantation as an aid in scale calibration for SIMS depth profiling
Author(s) -
Zalm P. C.,
Janssen K. T. F.,
Fontijn G. M.,
Vriezema C. J.
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740141115
Subject(s) - ion implantation , calibration , profiling (computer programming) , materials science , analytical chemistry (journal) , fluence , secondary ion mass spectrometry , chemistry , ion , computer science , mathematics , chromatography , statistics , organic chemistry , operating system
It is shown that low‐dose energetic ion implantation may greatly facilitate relative and even absolute depth‐scale calibration for SIMS depth profiling. Sample implantation has to follow all the processing steps to be investigated. The implantation conditions, such as species, fluence and energy, preferably have to be optimized for the particular problem at hand. Then the distribution profile of the implant is to be treated as a two‐dimensional marker, useful both for depth as well as for concentration calibration. A simple practical example demonstrates the power of the method.