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Comparison of beam‐induced profile broadening effects of gallium and copper in oxygen‐bombarded silicon
Author(s) -
Homma Yoshikazu,
Maruo Tetsuya
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740141108
Subject(s) - gallium , copper , silicon , impurity , oxygen , analytical chemistry (journal) , beam (structure) , chemistry , range (aeronautics) , secondary ion mass spectrometry , layer (electronics) , ion , materials science , optics , physics , organic chemistry , chromatography , composite material
Oxygen‐induced profile broadening in secondary ion mass spectrometry (SIMS) has been studied for Ga and Cu in silicon under 10 keV O 2 + bombardment at impact angles of 2–82°. A beam‐induced broadening effect was evident for impact angles <30° to the surface normal. In this range of impact angles, the SIMS signal of Cu showed exceptionally long decay, and its decay length decreased with increase in impact angle. By contrast, the decay length of Ga had a maximum at around 27° and decreased below this value. This difference in decay behaviour is attributed to the difference in impurity transport during beam‐induced oxidation. While Cu segregates at the SiO 2 /Si interface, Ga diffuses rather uniformly in the surface SiO 2 layer.