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Surface kinetic aspects of Si incorporation in molecular beam epitaxial growth of GaAs
Author(s) -
Lee B.,
Szafranek I.,
Stillman G. E.,
Arai K.,
Nashimoto Y.,
Shimizu K.,
Iwata N.,
Sakuma I.
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740141010
Subject(s) - molecular beam epitaxy , impurity , photoluminescence , flux (metallurgy) , analytical chemistry (journal) , sticking coefficient , epitaxy , silicon , molecular beam , acceptor , hall effect , materials science , kinetic energy , doping , chemistry , nanotechnology , molecule , optoelectronics , condensed matter physics , electrical resistivity and conductivity , adsorption , layer (electronics) , engineering , chromatography , desorption , quantum mechanics , physics , organic chemistry , electrical engineering , metallurgy
The incorporation and amphoteric behavior of Si impurities in Si‐doped (100) oriented molecular beam epitaxial (MBE) GaAs layers grown under different As 4 /Ga flux ratios but with a fixed Si flux have been studied using Hall effect measurements, photothermal ionization spectroscopy and photoluminescence. The Si donor concentration increases substantially with increasing As 4 /Ga flux ratio, while the Si acceptor concentration remains less than ∼ 10 13 cm −3 , regardless of the variation of As 4 /Ga flux ratio. The observed increase of carrier concentration with increasing V/III ratio is not due to a change of site preference of Si impurities from Ga to As sublattice sites as previously supposed, but is due to the increase in incorporation of Si donor. This result can be explained by the kinetic effects associated with surface reaction processes involved in Si impurity incorporation. From these results it is clear that the sticking coefficient of Si is less than unity, and varies with the growth conditions.