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SIMS analysis of GaP–GaAsP layered structures
Author(s) -
Söudervall U.,
Leys M. R.,
Lodding A.,
Samuelson L.
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740140911
Subject(s) - analytical chemistry (journal) , arsenic , sputtering , resolution (logic) , materials science , ion , range (aeronautics) , characterization (materials science) , sensitivity (control systems) , chemistry , thin film , atomic physics , physics , nanotechnology , organic chemistry , chromatography , artificial intelligence , electronic engineering , computer science , engineering , metallurgy , composite material
The paper describes the characterization by SIMS of thin layers of GaAs x P 1 − x between layers of GaP. The investigation aims at quantification of the arsenic concentration, x , in layers with thickness ranging from 20 to 100 nm. The study reveals a nearly constant sensitivity factor in the SIMS quantification of the arsenic content of the GaAs x P 1 − x layers. The sensitivity factor was found to be 4.3 × 10 −3 over the range x = 0.10–0.75, with no distinct concentration dependence. Depth resolution and decay length λ(0) were measured by analysing the interfaces of the GaAs x P 1 − x structures at different primary ion energies (1.5–13 keV). The best depth resolution, 3.2 nm, is obtained at 1.5 keV and the worst, 13 nm, at 13 keV. Decay length evaluations are consistent with a collisional mixing theory for the sputter‐induced broadening of an interface.