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SIMS depth profiling of Si/SiO 2 /Si layers by using self‐sputtered Ga + from a gallium liquid metal ion source
Author(s) -
Licciardello Antonino,
Torrisi Alberto,
Pignataro Salvatore
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740140902
Subject(s) - gallium , sputtering , analytical chemistry (journal) , ion , oxide , silicon , metal , materials science , yield (engineering) , secondary ion mass spectrometry , ion beam , chemistry , thin film , optoelectronics , nanotechnology , metallurgy , organic chemistry , chromatography
SIMS depth profiles of Si/SiO 2 /Si systems have been carried out using a Ga + primary beam tracing the Ga + yield. This ion is found to be a good marker for thin oxide layers at an Si/Si interface. In the case of thicker (7–85 nm) buried SiO 2 layers, various peaks are observed for Ga + yield. The influence of primary beam energy on the observed profiles has been investigated. A qualitative model is proposed that explains the observed profiles in terms of phenomena, such as radiation‐induced segregation, occurring in the same depth range of the cascade collision.