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Investigation of the early stages of thin‐film growth of Ni on thermally grown SiO 2 by means of RBS, AES and TEM
Author(s) -
Anklam H.J.,
Mattheis R.,
Thrum F.
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740140802
Subject(s) - transmission electron microscopy , analytical chemistry (journal) , substrate (aquarium) , saturation (graph theory) , materials science , sticking coefficient , thin film , cluster (spacecraft) , scanning electron microscope , chemistry , nanotechnology , composite material , adsorption , oceanography , mathematics , chromatography , combinatorics , desorption , geology , computer science , programming language , organic chemistry
To study the type of growth of Ni on thermally grown SiO 2 three analytical methods, RBS, AES and transmission electron microscopy (TEM), were used. An SiO 2 thickness of ∼ 30 nm has been proved to give optimal conditions with respect to sample preparation and measurement. On identical samples the differential sticking coefficient (by RBS), type of growth (by AES) and saturation cluster density (by TEM) have been determined in dependence on substrate temperature. The growth can be characterized by a pseudo‐Stranski‐Krastanov mechanism with incomplete condensation for substrate temperatures exceeding 575 K and a high saturation cluster density (∼ 3 × 10 12 cm −2 ) that is independent of substrate temperature.