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Quantitative AES and RBS depth profiles of titanium silicide films on GaAs after annealing
Author(s) -
Clement M.,
Sanz J. M.,
MartínezDuart J. M.
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740140620
Subject(s) - annealing (glass) , silicide , sputtering , analytical chemistry (journal) , titanium , materials science , ion , silicon , sputter deposition , thin film , chemistry , metallurgy , nanotechnology , organic chemistry , chromatography
Quantitative RBS and AES depth profiles of TiSi 2 contacts deposited on GaAs by co‐sputtering in a magnetron system have been performed. The bulk composition and thickness of the films were determined by RBS. AES showed that some oxygen was incorporated in the silicide layer during the deposition procedure. Comparing the depth profiles provided by both techniques, preferential sputtering effects have been studied. It is shown that silicon is preferentially sputtered as a consequence of its segregation to the surface. Sputter yields of the compound ( Y TiSi 2 = 2.85 atoms ion −1 ) and of the individual components ( Y Ti c= 2.5 atoms ion −1 and Y Si c= 3.1 atoms ion −1 ) were also estimated for 3‐keV Ar + ions. Important interdiffusion effects appear to occur at annealing temperatures above 600°C. It is also observed that As has a higher mobility than Ga in TiSi 2 when annealed at 800°C.