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Composition of TiN diffusion barriers in contact holes of advanced integrated circuits: A challenge for quantitative Auger spectroscopy
Author(s) -
Pamler W.,
Kohlhase A.
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740140604
Subject(s) - tin , auger electron spectroscopy , auger , diffusion barrier , sputtering , diffusion , substrate (aquarium) , materials science , spectroscopy , scattering , layer (electronics) , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , thin film , optics , atomic physics , metallurgy , chromatography , geology , nuclear physics , thermodynamics , oceanography , physics , quantum mechanics
TiN is used in advanced integrated circuits as a diffusion barrier between Al metallization and Si substrate. Quantitative analysis of the TiN composition in contact holes of submicron devices is a particular challege for Auger spectroscopy owing to the contact hole geometry and topography (low signal‐to‐noise ratio, shadowing effects, scattering of primary electrons) and owing to material‐related problems (peak overlapping and lineshape changes, preferential sputtering, crystalline effects). It will be shown how methods of sample preparation and data evaluation can be used to advantage in solving these difficulties. The analysis reveals that the sputter‐deposited barrier layer is depleted in nitrogen at the contact hole wall.