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An altered layer model for sputter‐profiling
Author(s) -
Carter G.,
Katardjiev I. V.,
Nobes M. J.
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740140406
Subject(s) - sputtering , layer (electronics) , chemistry , ion , materials science , nanotechnology , thin film , organic chemistry
An altered layer model is developed, consisting of an outer surface or sputtering layer from which atoms are ejected by ion bombardment and an adjacent deeper layer in which atomic constituents are spatially homogenised by bombardment‐induced mixing processes and between which layers atomic constituents are again intermixed. The model is applied to the case of sputtering erosion through an interface, and broadening effects are examined. It is shown that the model relaxes, on the one hand, to earlier treatments of non‐distinguishable sputtering and altered layers and, on the other hand, by assuming multiple altered layers, to earlier continuum (non‐discretized layer) models. Suggestions for controlled experimental studies for model verification are made.