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Redistribution of boron during thermal oxidation of silicon studied by SIMS using Ar + bombardment and the MISR method. Part II: Applications
Author(s) -
Michiels F.,
Butaye L.,
Adams F.
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740140404
Subject(s) - boron , redistribution (election) , secondary ion mass spectrometry , silicon , analytical chemistry (journal) , chemistry , oxygen , mass spectrometry , partition coefficient , materials science , organic chemistry , chromatography , politics , political science , law
Boron‐implanted silicon samples were oxidized (± 1100°C, 20–140 min) in an oxygen ambient to study the redistribution during thermal treatment. The use of matrix‐sensitive correlation factors, to account for the matrix effect when profiling boron through a SiO 2 /Si interface under Ar + bombardment, was evaluated. A correction procedure based on the calibration curve of Part I of this series was applied for this purpose. The internal precision of the procedure as estimated from several tens of profiles is of the order of 25%. The accuracy was assessed by comparison of the quantified SIMS profiles with boron profiles determined with sputtered neutrals mass spectrometry (SNMS). SIMS data indicate an enrichment in the SiO 2 phase of a factor of 2–3. SNMS data surpass the SIMS data by a factor of three and indicate a distribution coefficient of 9. The segregation coefficient is independent of the oxidation time. Samples with a high concentration of boron showed an anomalous diffusion behaviour, which can be attributed to the formation of boron precipitates which could be visualized by spatially resolved depth profiling with ion‐sensitive imaging.