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Hydrogen detection at thin film—silicon interfaces
Author(s) -
Jaworowski A. E.
Publication year - 1989
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740140108
Subject(s) - silicon , hydrogen , materials science , aluminium , semiconductor , chemical physics , diffusion , analytical chemistry (journal) , nanotechnology , optoelectronics , chemistry , composite material , physics , organic chemistry , chromatography , thermodynamics
The resonance depth profiling with 15 N beams was used to measure the hydrogen content and diffusion at the aluminum/silicon interface and the near‐interface region of silicon. The formation of a subsurface hydrogen barrier in silicon has been directly observed. The hydrogen barrier formation appears to be a general effect and a property of the near‐surface of silicon, and probably other semiconductors. The observed hydrogen profiles indicate that hydrogen can be easily and inadvertently introduced into the aluminum/silicon interface region and produces a large build‐up of hydrogen concentration in the near‐interface region of silicon.