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Quantification of sputter depth profiles by means of wedge crater sputtering—a new technique for depth scale calibration
Author(s) -
Voigtmann R.,
Moldenhauer W.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740130209
Subject(s) - impact crater , sputtering , wedge (geometry) , materials science , calibration , optics , ion beam , mineralogy , beam (structure) , geology , thin film , nanotechnology , physics , quantum mechanics , astronomy
An essential part of depth profile quantification is the conversion of sputtering time into depth, for which a simple method is described. It requires an ion gun providing a sufficient fine focusable ion beam. A suitable beam control produces a wedgelike distribution of ion current density in a raster field which is large compared to the ion beam cross‐section. A “wedge crater” is sputtered in this way in addition to the “normal crater” for depth profiling. The wedge crater profile obtained of surface profilometer measurements provides the sputtering time–depth relation. Moreover the sputtering rate as a function of depth may be deduced from wedge crater profile. Application of the method to SIMS depth profiling in multilayer thin film systems shows its usefulness in depth scale calibration and intensity correction. Small expenditure and universal applicability are advantages in comparison with other methods.