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Application of AES micro‐analysis to interface characterization in TiSi diffusion couples: 1—Phase analysis
Author(s) -
Quenisset C.,
Naslain R.,
Demoncy P.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740130203
Subject(s) - auger electron spectroscopy , titanium , annealing (glass) , materials science , diffusion , analytical chemistry (journal) , silicon , auger , phase (matter) , electron microprobe , metallurgy , chemistry , atomic physics , thermodynamics , physics , organic chemistry , chromatography , nuclear physics
A detailed analysis of the silicides which are formed by diffusion at a titanium–silicon interface was performed by quantitative AES analysis. The diffusion couples were annealed in vacuum at temperatures ranging from 450 to 700°C. Semi quantitative AES spectrum/peak‐to‐peak height analytical mode was found to be not accurate enough to identify the titanium silicides particularly at low temperatures and short durations annealing. A quantitative method based on E · N ( E ) spectra and peak‐to‐background ratios, was used which led to more reliable results. Furthermore, the shape of the titanium Auger electron peaks were used to confirm the phase nature. After a diffusion treatment of moderate intensity, the interaction zone is mainly formed of two silicides, Ti 5 Si 3 and TiSi 2 . On the contrary, under severe diffusion conditions, the disilicide phase is predominant. Finally, the growth of TiSi 2 rejects oxygen (present in trace amounts in the titanium film) in the Ti‐rich side of the couple.