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Investigation of cross‐contamination during Si‐implantion in GaAs with SIMS
Author(s) -
Meuris M.,
Vandervorst W.,
Maes H. E.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740120604
Subject(s) - contamination , ion implantation , analytical chemistry (journal) , materials science , matrix (chemical analysis) , silicon , chemistry , metallurgy , ion , environmental chemistry , composite material , ecology , organic chemistry , biology
The contamination of Si‐implantation in GaAs was analysed with SIMS. This was done by measuring the molecules composed of the ‘contamination‐atoms’ and the matrix atoms. It was concluded that there exists a co‐implantation of 14 N 15 , 10 B 19 F, 11 B 18 O up to 40% of the dose for the 29 Si‐implantation in the worst case and 20% of 14 N 2 for the 28 Si‐implantation. Electrical measurements and a residual gas analysis confirmed these results. A good mass separation for the implanter was found.