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RBS and AES depth profiles of Pd deposited on Si after annealing at different temperatures
Author(s) -
Clement M.,
Sanz J. M.,
Climent A.,
MartinezDuart J. M.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740120603
Subject(s) - auger electron spectroscopy , sputtering , silicide , annealing (glass) , analytical chemistry (journal) , rutherford backscattering spectrometry , auger , materials science , silicon , chemistry , thin film , metallurgy , atomic physics , nanotechnology , physics , chromatography , nuclear physics
Palladium silicide films were obtained after annealing thermally evaporated Pd layers on <111> p‐type Si substrates. The silicide layers formed at different temperatures were characterized by Rutherford backscattering (RBS) and Auger electron spectroscopy (AES). A quantification of the AES depth profiles was made by comparing the profiles with the RBS results. The sputtering time scale was converted into a depth scale using the values of the sputtering yields calculated from the RBS thickness and the AES sputter times. The transformation of the measured Auger intensities into concentration allowed a quantitative study of preferential sputtering in Pd 2 Si, taking into account the composition given by RBS. Finally we estimated the depth resolution of the AES profiles by comparing the width of the interfaces obtained from both techniques.