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Selective oxidation and chemical state of Al and Ti in (Ti, Al)n coatings
Author(s) -
Hofmann Siegfried,
Jehn Hermann A.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740120602
Subject(s) - x ray photoelectron spectroscopy , auger electron spectroscopy , chemical state , titanium nitride , nitride , sputtering , tin , materials science , oxide , analytical chemistry (journal) , oxidation state , alloy , metal , nitrogen , titanium , metallurgy , layer (electronics) , chemistry , chemical engineering , thin film , nanotechnology , physics , organic chemistry , chromatography , nuclear physics , engineering
Abstract (Ti, Al)N hard coatings are a promising alternative to TiN owing to an improved resistance to oxidation. In order to study the oxidation process in more detail, (Ti, Al)N coatings reactively sputter‐deposited on high speed steel substrates from a target composed of Ti:Al = 50:50 (at%) were annealed in air and in vacuum at temperatures between 500 and 800 °C. Auger electron spectroscopy (AES) sputter depth profiling as well as X‐ray photoelectron spectroscopy (XPS) studies indicate a high stability of the Ti‐N bond, whereas Al has considerable mobility in the mixed nitride. The chemical shift of the Al 2p XPS and LVV AES peaks allow a distinction between oxide, nitride and metallic states of Al. Preferential sputterin during depth profiling with 3 keV Ar + ions resulted in a relative depletion of Al in the surface layer. It is concluded, that the Al in (Ti, Al)N is only weakly bonded to nitrogen as compared to Ti.