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An energy‐resolved, electron‐stimulated desorption study of hydrogen from cleaned and oxidized Si(100)
Author(s) -
Corallo Cheryl F.,
Hoflund Gar B.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740120505
Subject(s) - desorption , hydrogen , annealing (glass) , silicon , atomic physics , ion , kinetic energy , analytical chemistry (journal) , electron , adsorption , chemistry , oxygen , materials science , physics , organic chemistry , quantum mechanics , chromatography , composite material
Abstract Electron‐stimulated desorption (ESD) was used to study the hydrogen present on cleaned and oxidized Si(100), Cleaning the surface by ion bombardment and annealing does not completely remove hydrogen from a Si(100) surface. Kinetic energy analysis of the hydrogen ions emitted through ESD shows that multiple states of adsorbed hydrogen are present. Electron beam exposure results in a depopulation of higher energy states. These states are repopulated upon annealing suggesting that the bulk silicon is a source of hydrogen. Oxygen exposure also results in a depopulation of the higher energy desorption states. Angle‐resolved, energy‐resolved ESD spectra of H + from the cleaned Si(100) surface were also collected. They show that different hydrogen bonding states desorb at different angles relative to the surface plane with differing energy distributions.