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The interaction of group IB metals with van der waals faces of semiconducting metal dichalcogenides
Author(s) -
Jaegermann W.,
Ohuchi F. S.,
Parkinson B. A.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740120504
Subject(s) - overlayer , van der waals force , metal , x ray photoelectron spectroscopy , epitaxy , chemistry , semiconductor , transition metal , redox , crystallography , materials science , layer (electronics) , inorganic chemistry , nanotechnology , catalysis , chemical engineering , molecule , optoelectronics , organic chemistry , engineering , biochemistry
The interaction of UHV cleaved van der Waals surfaces of the layered semiconductors SnS 2 , SnSe 2 , ZrS 2 , MoS 2 and WS 2 with deposited Cu, Ag and Au has been studied with XPS and LEED. It was observed for Cu on SnS 2 and for Cu and Ag on SnSe 2 that a bulk reaction ocurs leading to the formation of a new phase containing reduced Sn and oxidized Cu or Ag. Even at high coverages a metallic overlayer was not formed. An interfacial reaction at low coverages and subsequently a metallic layer was obtained for Cu on ZrS 2 and Ag on SnS 2 and Au on SnSe 2 . Cu, Ag and Au on MoS 2 or WS 2 form a metallic overlayer with an atomically abrupt semiconductor/metal interface. Epitaxial growth of a Au(111) layer was observed on WS 2 (0001). The differences in reactivity are related to differences in electrochemical standard potentials of the involved redox processes, structural features and to kinetic factors, e.g. ion transport.