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Molecular beam epitaxy of semiconductor interfaces and quantum wells for advanced optoelectronic devices
Author(s) -
Ploog Klaus
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740120502
Subject(s) - superlattice , molecular beam epitaxy , optoelectronics , monolayer , semiconductor , quantum well , epitaxy , materials science , photonics , semiconductor materials , layer (electronics) , condensed matter physics , optics , nanotechnology , physics , laser
Abstract We present selected examples for the control of interface formation with monolayer precision during molecular beam epitaxial growth and its application to modify the bulk properties of semiconductors arbitrarily through bandgap (or wavefunction) engineering. These examples concentrate on the materials system GaAs/AlAs which is important for high‐speed photonic and electron devices. In addition, as an example for strained‐layer superlattice, we briefly discuss Si/Si x Ge 1‐x superlattices, where the ordering of the electronic bands is strongly affected by the built‐in strain.