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Surface segregated boron nitride on a FeSi alloy: Thermal oxidation and related segregation phenomena
Author(s) -
Humbert P.,
Essouni M.,
Mosser A.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740120308
Subject(s) - boron nitride , materials science , boron , annealing (glass) , nitrogen , sulfur , surface layer , alloy , thermal oxidation , nitride , oxidation state , chemical engineering , layer (electronics) , metallurgy , chemistry , composite material , metal , organic chemistry , engineering
The surface of a Fe‐3.1 wt% Si single crystal, containing boron, nitrogen, sulphur and carbon in the ppm range, was analysed by ESCA at normal and grazing emission angle to determine both depth distribution and bonding state of the different elements. The BN‐covered surface was obtained by cacuum annealing at 850 °C. The thin BN layer remains stable on the surface during all the oxidation and heat treatments and prevents oxidation of the substrate. Oxidation only develops at the few sulphur‐covered areas, in the same way as for a totally sulphurcovered surface. The different segregation phenomena are qualitatively explained within classical segregation models.