Premium
Quantitative auger electron spectroscopy of Al x Ga 1 ‐xAs layers and superstructures grown by MBE
Author(s) -
Chen W. D.,
Bender H.,
Demesmaeker A.,
Vandervorst W.,
Maes H. E.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740120217
Subject(s) - auger electron spectroscopy , x ray absorption spectroscopy , analytical chemistry (journal) , electron microprobe , spectroscopy , molecular beam epitaxy , ternary operation , auger , photoluminescence , chemistry , electron spectroscopy , sputtering , materials science , absorption spectroscopy , epitaxy , thin film , mineralogy , atomic physics , optics , layer (electronics) , optoelectronics , physics , computer science , chromatography , nuclear physics , programming language , organic chemistry , nanotechnology , quantum mechanics
Quantitative Auger electron spectroscopy analysis is performed for the ternary system Al x Ga 1 ‐ x As with different x‐values. Thick layers and superstructures are grown by molecular beam epitaxy. The relative sensitivity factors are determined by the method of the internal reference element. Correction for preferential sputtering of Ga is accounted for by a correction factor determined relative to electron probe microanalysis measurements. The matrix corrections are unimportant for this system. The results will be compared with photoluminescence measurements.