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Platinum contamination of oxide grown by plasma anodization of gallium arsenide
Author(s) -
Lányi Š.,
Pavlyák F.,
Pinčik E.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740111103
Subject(s) - platinum , anodizing , oxide , materials science , cathode , gallium , sputtering , contamination , gallium arsenide , plasma , analytical chemistry (journal) , inorganic chemistry , chemistry , metallurgy , optoelectronics , thin film , nanotechnology , aluminium , catalysis , environmental chemistry , ecology , biochemistry , biology , physics , quantum mechanics
The contamination of oxide films caused by sputtering of the cathode (Pt) during the anodization of GaAs in an oxygen plasma was investigated. Platinum was found to accumulate near the surface of the oxide, its concentration decreasing rapidly towards the oxide‐semiconductor interface. No correlation of Pt content with deep level spectra from GaAs could be established. The amount of platinum built into the oxide depends sensitively on growth conditions.