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Transient effects during SIMS depth profiling with oxygen
Author(s) -
Avau D.,
Vandervorst W.,
Maes H. E.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740111006
Subject(s) - oxygen , sputtering , ionization , wafer , ion , analytical chemistry (journal) , irradiation , materials science , chemistry , ion beam , secondary ion mass spectrometry , atomic physics , radiation damage , partial pressure , radiation , optoelectronics , thin film , nanotechnology , optics , nuclear physics , physics , organic chemistry , chromatography
Before a steady state is reached in a SIMS experiment with oxygen primary ions, transient effects occur due to the build‐up of an oxygen profile in the sample. We studied profiles in the situation in which the variation of ionization yield, radiation enhanced diffusion, and radiation enhanced segregation are assumed to be the relevant processes. Low energy As and Sb implantations (4 keV to 10 keV) as well as homogeneously doped wafers are studied. In the transient region attention is paid to the As or Sb ion as well as to a high intensity molecular compound (AsSiO or SbSiO). Experiments are carried out using an electron beam to irradiate the sample during sputter profiling. The changes in the profile shape with varying primary energy, oxygen partial pressure and electron beam impact conditions lead to the description of a model of the enhanced redistribution due to segregation. This model includes the possibility for segregation towards the surface at the internally formed SiO 2 layer.