Premium
Elastic electron backscattering for quantitative elemental analysis of laser diode structures
Author(s) -
Szostak D. J.,
Thomas J. H.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740110608
Subject(s) - auger electron spectroscopy , laser , electron microprobe , resolution (logic) , microprobe , brightness , materials science , optics , cathode ray , aluminium , sensitivity (control systems) , elemental analysis , diode , analytical chemistry (journal) , electron , chemistry , optoelectronics , physics , mineralogy , organic chemistry , chromatography , quantum mechanics , artificial intelligence , electronic engineering , computer science , nuclear physics , metallurgy , engineering
A backscattered electron technique has been used to improve the spacial resolution and elemental sensitivity beyond that obtained from standard Auger microprobe electron spectroscopy. The elastically backscattered electron peak amplitude has been measured on a five‐layer laser structure of GaAs/AlGaAs with a CMA detector operating in the beam brightness modulation mode (BBM). Variations in elastic peak amplitude across these layers have been calibrated by standards to determine variations in aluminium concentration with 6% accuracy in areas as small as 0.25 μm diameter at atomic sensitivity of better than 1%. These results represent a significant improvement over the spatial resolution and elemental sensitivity available from standard Auger analysis in which backscattering contributions make the total analyzed area larger than the primary beam size.