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Application of a crystal spectrometer to particle induced X‐ray emission analyses of GaAs crystals
Author(s) -
Narusawa Tadashi,
Ohyama Hideaki,
Nakashima Hisao,
Hayashi Shigeki,
Koyanagi Kazuo,
Kumashiro Sumio,
Soejima Hiroyoshi
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740110504
Subject(s) - spectrometer , particle (ecology) , crystal (programming language) , wavelength , materials science , optics , analytical chemistry (journal) , chemistry , physics , optoelectronics , computer science , oceanography , chromatography , programming language , geology
The application of a wavelength dispersive x‐ray spectrometer, instead of the conventional energy dispersive spectrometer, to particle induced x‐ray emission analyses of GaAs is reported in this paper. The apparatus and its feasibility are described in detail through measurements of standard samples, Si, Mg, and B in GaAs. The conclusion is that the technique is a good tool for light elements analysis in heavy materials such as GaAs, but proper application of the technique necessitates carefully chosen samples.