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Application of reflectance studies to layered samples: SiO x on InSb
Author(s) -
Remond G.,
Holloway P. H.,
Caye R.,
Ruzakowski P.
Publication year - 1988
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740110303
Subject(s) - refractive index , molar absorptivity , reflectometry , reflectivity , materials science , substrate (aquarium) , optics , homogeneous , extinction (optical mineralogy) , analytical chemistry (journal) , chemistry , optoelectronics , physics , time domain , oceanography , chromatography , computer science , computer vision , thermodynamics , geology
Spatially resolved optical micro‐reflectometry in the visible region (from 400 nm to 800 nm) is used to study InSb substrates covered with SiO x (1 < x < 2) films of known thicknesses. Using optical constants (refractive index and extinction coefficient) for uncoated InSb derived from two successive reflectance measurements carried out in air and oil, a model of absorbing films on an absorbing substrate was used to calculate the reflectance. Comparison of measured and calculated reflectances for SiO 2 films over InSb demonstrate the validity of the model for an absorbing substrate covered with a homogeneous layer. Optical constants for the SiO x layers are obtained from comparisons between experimental and calculated reflectance curves.

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