Premium
Structural properties of native and ultra thin thermal oxides of silicon as studied by SEXAFS
Author(s) -
Braun W.,
Bader M.,
HolubKrappe E.,
Haase J.,
Eichinger P.
Publication year - 1987
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740100505
Subject(s) - quartz , silicon , oxide , materials science , fused quartz , x ray absorption fine structure , amorphous solid , silicon oxide , extended x ray absorption fine structure , absorption (acoustics) , wafer , thermal , bond length , amorphous silica , crystallography , analytical chemistry (journal) , chemical engineering , chemistry , nanotechnology , crystal structure , metallurgy , absorption spectroscopy , composite material , optics , organic chemistry , spectroscopy , silicon nitride , engineering , quantum mechanics , physics , meteorology
The geometrical structure of native silicon oxide and ultra thin thermal silicon oxides grown in situ on a Si(100) wafer have been investigated by surface extended x‐ray absorption fine structure (SEXAFS) above the oxygen K absorption edge (∼530 eV). The SiO bond length of the native oxide is identical with that of α‐quartz and amorphous silica and the SiO bond length of the thermal oxides corresponds closely to that of β‐quartz which is the medium temperature modification of α‐quartz.