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Suppression of surface topography development in ion‐milling of semiconductors
Author(s) -
BulleLieuwma C. W. T.,
Zalm P. C.
Publication year - 1987
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740100406
Subject(s) - ion , semiconductor , surface (topology) , angle of incidence (optics) , materials science , optics , semiconductor materials , chemistry , geometry , optoelectronics , physics , mathematics , organic chemistry
The occurrence and growth of hummocks on semiconductor surfaces rotated during ion bombardment have been studied. A simple geometrical is proposed which explains why such topographical features may be observed at incident angles of about 65° with respect to the surface normal, whereas they disappear or do not develop at angles of about 80°. It is argued that even microscopic surface undulations with dimensions of the order of 10 nm initiate hummock formation. Finally it is shown that a smooth surface, which can be produced by ion‐milling at grazing incidence, effectively prevents surface tropography development at any angle of incidence.