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High resolution electron microscopy of surfaces and surface reactions
Author(s) -
Smith David J.,
Bovin J. O.,
Bursill L. A.,
PetfordLong A. K.,
Ye H. Q.
Publication year - 1987
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740100213
Subject(s) - electron microscope , oxide , surface (topology) , metal , materials science , scanning electron microscope , electron , resolution (logic) , diffusion , semiconductor , microscopy , chemical physics , chemistry , nanotechnology , analytical chemistry (journal) , optics , optoelectronics , metallurgy , composite material , physics , geometry , mathematics , quantum mechanics , artificial intelligence , computer science , thermodynamics , chromatography
A 400 kV high‐resolution electron microscope has been used in the surface profile imaging mode to observe surfaces and surface reactions directly in real time. The processes studied include: the formation of surface oxides on Pd and Ag and on In‐compound semiconductors; surface reduction and metallization, diffusion and accretion on oxide surfaces; and structural rearrangements in small metal particles. It is concluded that the technique can provide unique information about surface phenomena.