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Electron yields and escape depths from Kapton and Teflon
Author(s) -
Yang KaiYueh,
Hoffman R. W.
Publication year - 1987
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740100210
Subject(s) - kapton , photoelectric effect , angle of incidence (optics) , electron , atomic physics , yield (engineering) , secondary electrons , materials science , x ray photoelectron spectroscopy , secondary emission , fluence , analytical chemistry (journal) , optics , chemistry , physics , nuclear physics , polyimide , irradiation , nuclear magnetic resonance , nanotechnology , composite material , optoelectronics , layer (electronics) , chromatography
Secondary electron emission (SEE) characteristics, i.e., SEE yield maximum, the electron energy corresponding to the maximum yield, E max , and crossover energies at which the SEE yield is unity, as a function of angle of incidence were determined for Kapton and Teflon. Photoelectron yield as a function of angle of incidence from Kapton were also determined. Secondary electron escape depth and photoelectron escape depth from Kapton were calcuated from the experimental data. Pulse beam techniques were used to reduce surface charging problems. Three μsec pulses of electrons were used in SEE experiments, and 100 msec to 1 sec pulses were used in photoemission experiments. The maximum yield of Kapton increases from 1.7 at normal incidence to 3.0 at 80° angle of incidence, E max increases from 280 eV to 620 eV. The maximum yield of Teflon increases from 2.4 at normal incidence to 3.1 at 80° angle of incidence. The secondary electron escape depth in Kapton was calculated t be 55 ± 5 Å. Photoelectrons excited by 21 eV photons have a 87 ± 30 Å escape depth in Kapton.