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A characterization study of the native Oxide layer formed on chemically Etched InP (111)
Author(s) -
Hoflund Gar B.,
Corallo Cheryl F.
Publication year - 1986
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740090509
Subject(s) - oxide , layer (electronics) , sputtering , materials science , analytical chemistry (journal) , chemistry , nanotechnology , thin film , metallurgy , chromatography
ISS, AES and angle‐resolved ESCA have been used to characterize the native oxide layer formed on the chemically polished and etched InP (111) surface. It is estimated that this oxide layer is about 30 Å thick and forms a sharp interface at the oxide/InP boundary. The oxide layer is nonhomogeneous. ISS shows that the outermost surface layer is In rich, and AES combined with the ISS results shows that the region just below the surface layer is P rich. The In is believed to be present in the oxide layer as InP and InPO 3 in approximately equal concentrations. Only a small amount of In 2 O 3 is detected. Carbon also comprises the oxide layer, and ESCA shows that it is present as graphite and/or hydrocarbons. The region below the oxide layer is P rich, but depth profiling using AES while sputtering suggests that the composition may approach that of InP with increasing depth.