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The application of secondary Ion mass spectrometry to surface analysis of semiconductor substrates and devices
Author(s) -
Brown A.,
van den Berg J. A.,
Vickerman J. C.
Publication year - 1986
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740090508
Subject(s) - microanalysis , secondary ion mass spectrometry , epitaxy , superlattice , semiconductor , optoelectronics , resolution (logic) , materials science , semiconductor device , analytical chemistry (journal) , mass spectrometry , chemistry , nanotechnology , layer (electronics) , computer science , organic chemistry , chromatography , artificial intelligence
The application of static, dynamic and imaging SIMS to semiconductor starting materials and devices is discussed. Static SIMS is used to examine the effect of various chemical preparation methods on the surface of the III‐V compounds InAs, InP and GaAs prior to epitaxial growth of device structures. Dynamic SIMS profiles from a superlattice structure involving alternative GaAlAs ‐ GaAs layers are presented along with an examination of the factors affecting depth resolution for low‐dimensional devices. Finally the importance of imaging or scanning SIMS for chemical mapping and microanalysis of final device structures is discussed.