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Depth profiling of carbonaceous films, produced in situ in the Tokamak TEXTOR
Author(s) -
Tschersich K. G.,
Littmark U.,
Fleischhauer H. P.
Publication year - 1986
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740090506
Subject(s) - sputtering , auger , argon , analytical chemistry (journal) , etching (microfabrication) , tokamak , in situ , materials science , ion , spectral line , chemistry , atomic physics , plasma , thin film , nuclear physics , physics , nanotechnology , layer (electronics) , organic chemistry , chromatography , astronomy
Samples of Si, Ni and Cr exposed to an in situ ‘carbonization’ in the Tokamak TEXTOR have been investigated. Depth profiles have been measured by argon ion sputter etching and AES. From the AES energy spectra (direct counting), the relative AES signals (peak to background ratios) have been derived by properly fitting the background and the peaks. The depth profiles are discussed in light of a ballistic‐mixing model for sputter etching and a standard exponential Auger escape probability.