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Mechanism of silicon surface roughening by reactive ion etching
Author(s) -
Oehrlein Gottlieb S.,
Schad Robert G.,
Jaso Mark A.
Publication year - 1986
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740080604
Subject(s) - scanning electron microscope , auger electron spectroscopy , reactive ion etching , silicon , etching (microfabrication) , materials science , ion , isotropic etching , analytical chemistry (journal) , chemistry , nanotechnology , optoelectronics , composite material , physics , organic chemistry , layer (electronics) , chromatography , nuclear physics
Rough silicon surfaces resulting from CF 4 reactive ion etching have been studied by scanning electron microscopy/scanning Auger microscopy and x‐ray photoemission spectroscopy. The experimental data demonstrate a roughening mechanism based on laterally non‐uniform etch rates due to the existence of involatile surface residues.