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Study of interfaces in oxidized Fe/Si system by XPS and XAES: Use of the Auger parameter
Author(s) -
Rivière J. C.,
Crossley J. A. A.
Publication year - 1986
Publication title -
surface and interface analysis
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.52
H-Index - 90
eISSN - 1096-9918
pISSN - 0142-2421
DOI - 10.1002/sia.740080406
Subject(s) - auger , x ray photoelectron spectroscopy , silicon , oxide , auger electron spectroscopy , silicon oxide , bremsstrahlung , atomic physics , analytical chemistry (journal) , chemistry , materials science , nuclear magnetic resonance , metallurgy , physics , silicon nitride , electron , nuclear physics , environmental chemistry
Auger Parameters for a variety of silicon compounds have been measured by a combination of XPS using both AIKα ZrLα characteristic x‐radiation, and of XAES using Bremsstrahlung radiation. The Parameters so derived have then been used to study the chemical states of silicon at and near interfaces in the oxide film formed by air‐and CO 2 ‐oxidation of Fe/Si alloys. Supportive evidence for the interpretations is provided by the widths and shapes of the silicon KL 2,3 L 2,3 Auger peaks.